finFET Noise
Noise Aspect FinFET vs Planar Better or Worse? Why (Physical Reason) 1/f (Flicker) Noise at Moderate/High Vgs Lower Better Volume inversion keeps carriers away from interface → less trap interaction. 1/f Noise Variation (Device-to-Device) Larger spread Worse Each fin has its own sidewall roughness, trap density, and geometry → statistical variation. RTS (Random Telegraph Signal) Noise More prominent in minimum fins Worse One trap can strongly modulate current because channel width is tiny (a few nm). Thermal Channel Noise (γ-factor) Slightly different; often slightly lower Slightly Better Improved gate control and reduced channel length modulation reduce excess thermal noise. Gate-Induced Noise (Gatenoise / Induced Gate Noise) Bias-dependent; correlation (α) improves slightly Better for RF 3D geometry and better electrostatics reduce channel–gate capacitive coupling. Shot Noise from Source/Drain Tunneling Minimal at 14–22 nm; increases <10 ...