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finFET Noise

Noise Aspect FinFET vs Planar Better or Worse? Why (Physical Reason) 1/f (Flicker) Noise at Moderate/High Vgs Lower Better Volume inversion keeps carriers away from interface → less trap interaction. 1/f Noise Variation (Device-to-Device) Larger spread Worse Each fin has its own sidewall roughness, trap density, and geometry → statistical variation. RTS (Random Telegraph Signal) Noise More prominent in minimum fins Worse One trap can strongly modulate current because channel width is tiny (a few nm). Thermal Channel Noise (γ-factor) Slightly different; often slightly lower Slightly Better Improved gate control and reduced channel length modulation reduce excess thermal noise. Gate-Induced Noise (Gatenoise / Induced Gate Noise) Bias-dependent; correlation (α) improves slightly Better for RF 3D geometry and better electrostatics reduce channel–gate capacitive coupling. Shot Noise from Source/Drain Tunneling Minimal at 14–22 nm; increases <10 ...
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Why Whittling Down Precision Could be Your Best Finishing Touch (Chris Mangelsdorf)

Really well done..  https://www.youtube.com/watch?v=pdVfni3gADo asdf Significant Digits: Don'ts and Do's Don't use too many digits Too many digits imply fake precision. Quoting a shoe size as 10.314 inches when shoes only come in half sizes. Presenting a Spurious Free Dynamic Range (SFDR) of 97.822 dB and implying that the last digits (.822) are meaningful when they represent a tiny, likely insignificant difference in amplitude (0.2% for rounding to 97.8). Don't include digits that are merely noise Variability across trials shows those digits aren't meaningful. Taking two measurements of the SFDR. If the first measurement is 97.822 dB and the second is 97.835 dB, the digits after the first decimal place are changing and are likely noise. Don't include digits that are context-dependent Results that vary with setup shouldn't be repo...
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